Temperature effects on the Si/SiO2 interface defects and suboxide distribution

Temperature effects on the Si/SiO2 (0.5-5 nm thick) interface defects and s uboxide distribution are studied by electron paramagnetic resonance and con ventional X-ray photoelectron spectroscopy. The experiments are made on por ous (66% porosity) silicon samples (10 mu m thick) thermally oxidized in th e 400-1000 degrees C temperature range. Electron paramagnetic resonance mea surements (similar to 9.6 GHz, 25 degrees C) show a decrease of the density of broken bonds called P-bl when the oxidation temperature increases. Howe ver no change of the interfacial structure is observed through the suboxide distribution. We interpret our results in terms of viscoelastic relaxation . (C) 1999 Published by Elsevier Science B.V. All rights reserved.