High-temperature strength and microstructural analysis in Si-3/N-4/20-vol%-SiC nanocomposites

Citation
Ds. Cheong et al., High-temperature strength and microstructural analysis in Si-3/N-4/20-vol%-SiC nanocomposites, J AM CERAM, 82(4), 1999, pp. 981-986
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
82
Issue
4
Year of publication
1999
Pages
981 - 986
Database
ISI
SICI code
0002-7820(199904)82:4<981:HSAMAI>2.0.ZU;2-D
Abstract
Si3N4/20-vol%-SiC nanocomposites with Al2O3 and Y2O3 as sintering additives have demonstrated very high strength at room temperature; however, the hig h-temperature strength was drastically decreased, because of the low soften ing temperature of the grain-boundary phase. To improve the high-temperatur e strength, only Y2O3 was used as a sintering additive. Results showed that the fracture strength of this nanocomposite at temperatures >1200 degrees C was increased by adding Y2O3 without Al2O3; however, a distinct decrease in the high-temperature strength still was observed for higher Y2O3 content s, The fracture strength at room temperature (similar to 1 GPa) was maintai ned up to 1400 degrees C in the sample that contained SiC particles (30 nm in size) and 4 wt% of Y2O3. Remarkably, the SiC particles at the grain boun daries were bonded directly to Si3N4 grains without a glassy phase. This sa mple fractured in an elastic manner without exhibiting plastic deformation up to 1400 degrees C and showed no evidence of subcritical crack growth on the fracture surface. The significant improvement of the high-temperature s trength in this nanocomposite can be attributed to inhibition of grain-boun dary sliding and cavity formation, primarily by intergranular SiC particles that are bonded directly to the matrix grains, as well as crystallization of the grain-boundary phase. Rietveld analysis of the X-ray diffraction dat a revealed the presence of a secondary phase-10Y(2)O(3). 9SiO(2). Si3N4 (h- phase)-in samples with Y2O3, whereas YSiO2N was present in the samples that contained both Y2O3 and Al2O3.