Structure and conducting properties of La1-xSrxCoO3-delta films

La1-xSrxCoO3-delta (LSCO) films have been deposited on LaAlO3 (LAO), La1-xS rxGa1-yMgyO3-delta/LaAlO3 (LSGM/LAO) and yittria-stabilized zirconia (YSZ) substrates by pulsed laser deposition (PLD) for application to thin film so lid oxide fuel cell cathodes. The optimum conditions for deposition were de termined for the different substrates in an ambient of 80-310 mTorr oxygen pressure and at a substrate temperature range of 450 to 750 degrees C. The films structures were analyzed by XRD, RBS and SEM. Epitaxial LSCO films we re grown with (110) preferred orientation on YSZ, and with (100) orientatio n on LAO and LSGM/LAO. The electrical resistivity of the epitaxial LSCO fil ms ranged from 10(-2) to 10(-4) Ohm cm, depending on the deposition tempera ture and substrate. The ionic conducting behavior of the LSCO film on YSZ w as investigated by impedance measurement. (C) 1999 Elsevier Science Limited . All rights reserved.