Semiconducting barium titanate doped with oxygen-free compounds

Citation
Ll. Kovalenko et al., Semiconducting barium titanate doped with oxygen-free compounds, J EUR CERAM, 19(6-7), 1999, pp. 965-968
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
19
Issue
6-7
Year of publication
1999
Pages
965 - 968
Database
ISI
SICI code
0955-2219(1999)19:6-7<965:SBTDWO>2.0.ZU;2-H
Abstract
The physicochemical properties of semiconducting BaTiO3 doped with TiB2, Ti C, TiN, ZrN, BN, and AlN have been studied using thermogravimetry, XRD anal ysis and electron microscopy. When the above dopants are added, compounds a re formed which influence redox reactions, which proceed during the synthes is of (Ba, Y)TiO3 ceramics, and allow the temperature range of reduction to be extended. (C) 1999 Elsevier Science Limited. All rights reserved.