Electrical conductivity of strontium bismuth titanate under controlled oxygen partial pressure

Citation
C. Voisard et al., Electrical conductivity of strontium bismuth titanate under controlled oxygen partial pressure, J EUR CERAM, 19(6-7), 1999, pp. 1251-1254
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
19
Issue
6-7
Year of publication
1999
Pages
1251 - 1254
Database
ISI
SICI code
0955-2219(1999)19:6-7<1251:ECOSBT>2.0.ZU;2-E
Abstract
The electrical conductivity of SrBi4Ti4O15 (SBT) has been measured under co ntrolled oxygen partial pressure. Both acceptor and donor doping effects we re studied using de conductivity and impedance measurements. In addition to the ceramic samples with random grain orientation, grain oriented samples were prepared by hot forging. It has been shown that the conductivity of SB T is electronic p type in air at low temperature and it is n type at high t emperature (greater than or equal to 700 degrees) up to 1 atm pO(2). The co nductivity is increased by Mn doping and decreased by Nb doping at low temp eratures (less than or equal to 220 degrees C) and decreased by Mn coping a nd increased by Nb doping at high temperatures (700-1000 degrees C). The sl ope of the conductivity versus pO(2) curve is significantly decreased by Mn coping above 700 degrees C in the pO(2) range from 1 atm to 10(-5) atm. (C ) 1999 Elsevier Science Limited. All rights reserved.