C. Voisard et al., Electrical conductivity of strontium bismuth titanate under controlled oxygen partial pressure, J EUR CERAM, 19(6-7), 1999, pp. 1251-1254
The electrical conductivity of SrBi4Ti4O15 (SBT) has been measured under co
ntrolled oxygen partial pressure. Both acceptor and donor doping effects we
re studied using de conductivity and impedance measurements. In addition to
the ceramic samples with random grain orientation, grain oriented samples
were prepared by hot forging. It has been shown that the conductivity of SB
T is electronic p type in air at low temperature and it is n type at high t
emperature (greater than or equal to 700 degrees) up to 1 atm pO(2). The co
nductivity is increased by Mn doping and decreased by Nb doping at low temp
eratures (less than or equal to 220 degrees C) and decreased by Mn coping a
nd increased by Nb doping at high temperatures (700-1000 degrees C). The sl
ope of the conductivity versus pO(2) curve is significantly decreased by Mn
coping above 700 degrees C in the pO(2) range from 1 atm to 10(-5) atm. (C
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