Electrostriction measurements on low permittivity dielectric materials

Citation
R. Yimnirun et al., Electrostriction measurements on low permittivity dielectric materials, J EUR CERAM, 19(6-7), 1999, pp. 1269-1273
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
19
Issue
6-7
Year of publication
1999
Pages
1269 - 1273
Database
ISI
SICI code
0955-2219(1999)19:6-7<1269:EMOLPD>2.0.ZU;2-S
Abstract
To measure the electrostrictive effects in low permittivity materials, extr emely sensitive instrumentation is required. A modified compressometer for resolving fractional changes in capacitance on the order of 10(-6) is used in this work, along with a modified single beam interferometer capable of s ub-angstrom resolution in displacement. For the compressometric method a hi gh sensitivity capacitance bridge, GenRad 1615, is coupled with two lock-in amplifiers to detect attofarad (10(-18) F) level capacitance changes cause d by in-phase cyclic uniaxial stresses on samples. The interferometer is a Michelson-Morley type instrument modified to detect changes in interference fringe intensity for very small changes in path; length. The measurements confirmed by both techniques are used to establish a set of reliable and ac curate data of electrostriction coefficients for low permittivity materials . Using these recent data, along with widely accepted data on ferroelectric materials and soft polymers, the linear relationship between electrostrict ion coefficient (Q) and the ratio of elastic compliance over dielectric per mittivity (s/epsilon(0)epsilon(r)) is obtained. This leads to an effective way to predict the electrostriction coefficient in dielectric materials. (C ) 1999 Elsevier Science Limited. All rights reserved.