Defects in Cu and Cu-O films produced by reactive magnetron sputtering

Copper and Cu-O films, grown on copper and silicon substrates via d.c. magn etron sputtering, have been studied using electron microscopy and positron annihilation spectroscopy. The results showed that the substrate material h as an essential role in the film structure. In the case of films class A, t he substrate material is copper, and in the case of films class B, the subs trate material is silicon. The differences between positron lifetimes for f ilms class A and class B could result from different defect state in thin l ayer substrate boundary. The properties of the films depend on the mode of preparation. (C) 1999 Elsevier Science B.V. All rights reserved.