Enhancement of nucleation and growth of diamond films using In-Sn-O bufferlayer on Si substrate

Authors
Musale, DV Pai, MP Sainkar, SR Kshirsagar, ST
Citation
Dv. Musale et al., Enhancement of nucleation and growth of diamond films using In-Sn-O bufferlayer on Si substrate, MATER LETT, 39(2), 1999, pp. 86-90
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
39
Issue
2
Year of publication
1999
Pages
86 - 90
Database
ISI
SICI code
0167-577X(199904)39:2<86:EONAGO>2.0.ZU;2-4
Abstract
We report here enhancement of nucleation and growth of diamond films deposi ted by hot filament (BF) chemical vapour deposition (CVD) technique on as-r eceived mirror-polished and scratched silicon substrates coated with In-Sn- O (ITO) buffer layers. The nucleation density (ND) for variously pretreated substrates is found to improve by a factor greater than 500 when they were coated with ITO layer. The role of scratches is shown to he mainly that of particle traps whereas their topographical features appear to have no role in nucleation. (C) 1999 Elsevier Science B.V. All rights reserved.