Open circuit voltage decay method for measuring of excess carrier Lifetime
is shown to be effective for in-process checking of ion irradiated power di
odes. 2.5 kV/100 A P-i-N diodes irradiated by helium ions with different ir
radiation energies and doses were used for presentation of capabilities of
this method. Differences in carrier dynamics during the OCVD process betwee
n unirradiated and irradiated devices were studied by use of the device sim
ulation in ATLAS. (C) 1999 Elsevier Science Ltd. All rights reserved.