Open circuit voltage decay lifetime of ion irradiated devices

Authors
Vobecky, J Hazdra, P Zahlava, V
Citation
J. Vobecky et al., Open circuit voltage decay lifetime of ion irradiated devices, MICROELEC J, 30(6), 1999, pp. 513-520
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
30
Issue
6
Year of publication
1999
Pages
513 - 520
Database
ISI
SICI code
0026-2692(199906)30:6<513:OCVDLO>2.0.ZU;2-6
Abstract
Open circuit voltage decay method for measuring of excess carrier Lifetime is shown to be effective for in-process checking of ion irradiated power di odes. 2.5 kV/100 A P-i-N diodes irradiated by helium ions with different ir radiation energies and doses were used for presentation of capabilities of this method. Differences in carrier dynamics during the OCVD process betwee n unirradiated and irradiated devices were studied by use of the device sim ulation in ATLAS. (C) 1999 Elsevier Science Ltd. All rights reserved.