The numerical modelling of silicon carbide high power semiconductor devices

Over the past decade there was a renewed surge of activity concerning the r esearch and development of the wide bandgap group IV compound semiconductor silicon carbide (SiC). The current research interest in SiC for power elec tronic applications has re-emerged because of the advances made in fundamen tal SIC material and device processing technologies. This article outlines recent SIC power device developments with an emphasis on numerical device m odelling results. This work also presents 1D and 2D numerical modelling res ults for unterminated circular high voltage 4H-SiC Schottky rectifiers. An overview of the current status of SIC high voltage junction termination tec hniques is also mentioned. (C) 1999 Elsevier Science Ltd. All rights reserv ed.