A lumped-charge model for gate turn-off thyristors suitable for circuit simulation

An innovative formulation of the lumped charge approach is used to extract a circuit model of high voltage gate rum-off thyristor (GTO) suitable to ac curately predict their static and dynamic characteristics. The model includ es the effects of depletion capacitance, non-quasistatic phenomena, the ava lanche breakdown of the cathode junction and the effects of the anode short s. The accuracy of the model can be increased thanks to its modularity and expandability. The equations of the model are given in such a form, which c an be easily incorporated into PSPICE simulators as a sub-circuit net-list. The model was tested with success on devices rated at 4500 V and 2500 A. ( C) 1999 Elsevier Science Ltd. All rights reserved.