The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative diff erential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction pa th instead of the lowly resistive n buffer region of the conventional SA-LI GBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster tur n-off time than that of the LIGBT. (C) 1999 Elsevier Science Ltd. All right s reserved.