Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures

This article reports experimental results on the switching behaviour of lat eral IGBT structures. In addition to a conventional LIGBT structure (C-LIGB T), the experimental electrical characteristics of a novel modified structu re (M-LIGBT) are also reported. Transient simulations with the aid of MEDIC I together with its Circuit Analysis Module were carried out in order to pr ovide more insight into the device physics. The performance at high operati ng temperatures is also investigated showing that the M-LIGBT shows a super ior electrical behaviour. In addition, the inclusion of a shorted-anode str ucture on the switching process is also discussed. (C) 1999 Elsevier Scienc e Ltd. All rights reserved.