Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor

MOS-thyristor devices with high voltage and current capabilities may replac e conventional thyristors and IGBTs in high power applications. However, th e maximum controllable current density (J(mcc)), the current saturation cap ability and the total transient losses have to be improved. This article is addressed to the comparison of the electrical characteristics of MOS-thyri stor structures including a Floating Ohmic Contact to provide high packing density and current saturation capability. The operation mode of both struc tures is analyzed with the aid of numerical simulations and experimental re sults, obtained from 1200 V devices, are provided to compare their electric al characteristics. (C) 1999 Elsevier Science Ltd. All rights reserved.