Studies of radiation hardness of oxygen enriched silicon detectors

Detectors for high-energy particles sustain a substantial amount of structu ral defects induced by the particles during the operation period. Some of t he defects have been found to be electrically active, degrading the detecto r's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long "lifetime" d etectors are required. This work reports about radiation hardness of silico n P-I-N devices fabricated from oxygen enriched high resistivity material. The high and nearly uniform concentration of oxygen in Float Zone silicon h as been achieved by diffusion of oxygen from SiO2 layers. (C) 1999 Elsevier Science B.V. All rights reserved.