Citation
A. Castaldini et al., Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation, NUCL INST A, 426(1), 1999, pp. 192-196
Citations number
18
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002
→ ACNP
Volume
426
Issue
1
Year of publication
1999
Pages
192 - 196
Database
ISI
SICI code
0168-9002(19990421)426:1<192:EFASDI>2.0.ZU;2-W
Abstract
The effect of irradiation on semi-insulating gallium arsenide Schottky diod
es has been investigated by means of surface potential measurements and spe
ctroscopic techniques. Before and after irradiation the electric field exhi
bits a Mott barrier-like distribution, and the box-shaped space charge modi
fies its distribution with irradiation. The increase in density or the gene
ration of some traps changes the compensation ratio producing a deeper acti
ve region and a more homogeneous distribution of the electric field. The la
tter phenomenon is also observed by EPIC images of edge-mounted diodes. (C)
1999 Elsevier Science B.V. All rights reserved.