Radiation damage tests of GaAs HV switches for MSGCs bias control

Authors
Bisogni, MG Bottigli, U Fantacci, ME Stefanini, A Bertolucci, E Conti, M Russo, P Cola, A Quaranta, F Vasanelli, L Stefanini, G
Citation
Mg. Bisogni et al., Radiation damage tests of GaAs HV switches for MSGCs bias control, NUCL INST A, 426(1), 1999, pp. 216-220
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
426
Issue
1
Year of publication
1999
Pages
216 - 220
Database
ISI
SICI code
0168-9002(19990421)426:1<216:RDTOGH>2.0.ZU;2-0
Abstract
GaAs optoelectronic switches as local control of the HV MSGCs strips are be ing developed for the CMS experiment. The radiation environment inside the CMS tracker will be very high. Typical hadron fluence will be up to approxi mate to 10(14) cm(-2) and ionising doses as large as 100 kGy during the exp eriment lifetime. The aim of this work is to test the performance of some G aAs devices in terms of radiation hardness up to the levels of hadron fluen ce and ionising doses expected inside the CMS tracker. (C) 1999 Elsevier Sc ience B.V. All rights reserved.