We present first-principles calculations of the structural and electronic p
roperties of Si(001)-SiO2 interfaces. We first arrive at reasonable structu
res for the c-Si/a - SiO2 interface via a Monte Carlo simulated annealing a
pplied to an empirical interatomic potential, and then relax these structur
es using first-principles calculations within the framework of the density-
functional theory. We find a transition region at the interface, having a t
hickness on the order of 20 Angstrom, in which there is same oxygen deficie
ncy and a corresponding presence of suboxide Si species (mostly Si+2 and Si
+3). Distributions of bond lengths and bond angles, and the nature of the e
lectronic states at the interface, are investigated and discussed. The beha
vior of atomic oxygen in a-SiO2 is also investigated. The peroxyl linkage c
onfiguration is found to be lower in energy than interstitial or threefold
configurations. Eased on these results, we suggest a possible mechanism for
oxygen diffusion in a-SiO2 that may be relevant to the oxidation process.
[S0163-1829(99)08115-1].