Coupling of ultrathin InAs layers as a tool for band-offset determination

We have experimentally determined the band offsets at a highly strained InA s/GaAs interface by means of coupling between two ultrathin InAs layers emb edded in a GaAs matrix. When both InAs layers are separated by a 32-ML barr ier, the confined electron and light-hole (lh) states are split into symmet ric and antisymmetric states, whereas the heavy-hole (hh) level is not spli t yet. Consequently, the splitting between the hh exciton transitions, whic h is measured by photoluminescence excitation spectroscopy, is solely deter mined by the conduction-band offset Delta E-c. Knowing Delta E-c, the hh an d lh band offsets Delta E-hh and Delta E-lh were subsequently determined fr om the coupling-induced shift and splitting in samples with 16-, 8-, and 4- ML barriers. We find a conduction-band offset of 535 meV, a conduction-band offset ratio of Q(c) = 0.58, and a strain-induced splitting between the hh and Ih levels of 160 meV. This method for the direct determination of band offsets is explicitly sensitive to the band-offset ratio, and its applicat ion is not restricted to particular type-I semiconductor heterostructures a s long as the effective-mass-band-offset product for the conduction and val ence bands differs by at least a factor of 2. [S0163-1829(99)01715-4].