Resonant and correlation effects in the tunnel structures with a sequential 2D electron layers in a high magnetic field

Tunnelling between parallel two-dimensional electron gases (DEG) in accumul ation layers formed on both sides of the single doped AlGaAs barrier are ex amined in both zero and high magnetic field. Accumulation layers are separa ted from highly n-doped contact regions which freely supply electrons to th e 2DEGs via 80 nm thick lightly n-doped spacer layers. Strongly oscillating current;along: the 2DEG's is absent in this arrangement. It is found that high magnetic field (nu < 1) shifts resonant tunnelling between 2DEGs with different as grown electron concentrations from few millivolts position on the current-voltage: dependence to zero external bias and suppresses tunnel ling current, creating wide-asymmetric gap in the tunnelling density of sta tes at-the Fermi level arising from the in-plane Coulomb interaction in the 2DEGs in a high magnetic field.