CZT semiconductor radiation sensor for high energy gamma rays

Citation
K. Ikegami et al., CZT semiconductor radiation sensor for high energy gamma rays, RADIAT EFF, 146(1-4), 1998, pp. 161-173
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
146
Issue
1-4
Year of publication
1998
Pages
161 - 173
Database
ISI
SICI code
1042-0150(1998)146:1-4<161:CSRSFH>2.0.ZU;2-E
Abstract
Cadmium zinc telluride (CZT) radiation detectors are usable at room tempera ture because of sufficient band gap energy (2 eV). Very pure crystals have become available thanks to recent improvements in the crystal growth method . However, the sensitivity is low for high energy gamma rays over 1 MeV. In this study, in order to develop a new radiation sensor which consisted of stacked CZT crystals to make it sensitive to high energy gamma rays over 1 MeV, the sensitivity was calculated with the Monte Carlo simulation code EG S4 considering the charge carrier mobility. The basic performance of a CZT detector was investigated experimentally to examine the feasibility in nucl ear power plants. The sensitivity was nearly constant with increasing tempe rature of CZT crystals to 100 degrees C. The energy resolution and noise ch aracteristics were confirmed to be fully satisfactory as those for radiatio n sensors.