Pile irradiation induced 4.4-eV photoluminescence in fused silica

Citation
S. Nasu et al., Pile irradiation induced 4.4-eV photoluminescence in fused silica, RADIAT EFF, 146(1-4), 1998, pp. 331-338
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
146
Issue
1-4
Year of publication
1998
Pages
331 - 338
Database
ISI
SICI code
1042-0150(1998)146:1-4<331:PII4PI>2.0.ZU;2-W
Abstract
In pile irradiated type-I fused silica, strong photoluminescence (PL) was o bserved at similar to 4.4eV. The PL band was successfully decomposed into t wo Gaussian spectra due to the pile-induced B-2 alpha band at 4.46 eV and d ue to the intrinsic B-2 beta band at 4.42 eV, respectively. In addition, st rong optical absorption (OA) was observed above similar to 4eV in these sam ples. The OA band was also decomposed into six Gaussian OA bands at 6.5, 5. 85, 5.53, 5.17, 5.06, and 4.86 eV. Besides, the PL band at 1.9 eV due to th e NBOHC was observed. The above results indicated that pile irradiation ind uced the B-2 alpha band by recoiling an oxygen atom, and the NBOHC and the E' center by the fission of the Si-O-Si bond.