Synthetic high-temperature high-pressure grown diamonds were subjected to d
ifferent treatments (high-temperature annealing, electron- or neutron irrad
iation) with the purpose to follow genesis of defect aggregates suitable fo
r spectrally selective phototransformation. Conditions for the genesis of p
hotochromic optical centers with lines at 774 and 813 nm were revealed. Pho
totransformation properties of Ni-related defects were examined.