Jx. Gao et al., A modification of formulas used in SOI capacitors analysis and its application in total dose radiation, RADIAT EFF, 145(4), 1998, pp. 307-317
The capacitance-voltage (C-V) technique used to characterize the irradiatio
n response of separation by implantation of oxygen (SIMOX) material was imp
roved and then used in the analysis of the total-dose radiation effects of
the silicon on insulator (SOI) capacitors.
The capacitor samples were made up by using the etch-back technique to pull
off several layers of fluorine ions (F+) implanted and non-implanted SIMOX
materials. According to the results of deconvolution of C-V data of those
samples, after irradiation, it indicated that the tolerance of SIMOX materi
als to total dose radiation was improved by F+ ions implanted into the buri
ed SiO2 layer.