Characterization of annealing of Co-60 Gamma-ray damage in N-channel powerMOSFETs

Authors
Bendada, E Rais, K Mialhe, P
Citation
E. Bendada et al., Characterization of annealing of Co-60 Gamma-ray damage in N-channel powerMOSFETs, RADIAT EFF, 143(3), 1998, pp. 247-254
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
143
Issue
3
Year of publication
1998
Pages
247 - 254
Database
ISI
SICI code
1042-0150(1998)143:3<247:COAOCG>2.0.ZU;2-P
Abstract
The purpose of this work was to characterize the annealing of Gamma-ray dam age in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad m in(-1) are presented. Temperature annealing effects, at 100 degrees C, are discussed and analyzed by the evolution of the density trapped oxide charge s and trapped interface charges.