The behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates

Temperature-dependent photoluminescence (PL) measurements on In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the shallow don or-band recombination (D, h) peak. The temperature dependence of the PL int ensity of the peak at 1.590 eV observed at 12 K shows that it is related to shallow donor-band recombination. The inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change f rom correlated electron and hole distributions in the low-temperature regio n below 20 K to random electron and hole distribution in the relatively hig h-temperature region above 40 K. These results indicate that the PL intensi ty and the linewidth of the (D, h) peak in In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes. (C) 1 999 Elsevier Science Ltd. All rights reserved.