Chemical depth profiling on submicron regions: a combined focused ion beamscanning electron microscope approach

Citation
Dk. Chan et al., Chemical depth profiling on submicron regions: a combined focused ion beamscanning electron microscope approach, SURF INT AN, 27(4), 1999, pp. 199-203
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE AND INTERFACE ANALYSIS
ISSN journal
01422421 → ACNP
Volume
27
Issue
4
Year of publication
1999
Pages
199 - 203
Database
ISI
SICI code
0142-2421(199904)27:4<199:CDPOSR>2.0.ZU;2-I
Abstract
The combination of focused ion beam (FIB) mining and held emission scanning electron microscopy (SEM) with x-ray energy-dispersive spectroscopy (EDS) makes possible high-spatial-resolution (<1 mu m) element-specific depth pro filing. The depth profile resolution is controlled via the FIB to < 5 nm sp utter depths. Depth profiles through thin-film hard disk media on NiP subst rates and through similar film structures deposited on a carbon-coated subs trate are presented. The high spatial resolution of the FIB/SEM depth profi le is not necessary for blanket films, and depth profiles through them are used to benchmark the spatial and depth resolution of the technique using a field emission SEM, Energy depth profiles that use increasing primary elec tron beam voltages in the spectrometer are shown on the same samples in com parison to FIB depth profiles. A brief overview of this technique in relati on to XPS, AES and SIMS illustrates applications where FIB depth profiling analysis offers some advantages. Copyright (C) 1999 John Wiley & Sons, Ltd.