The surface micromorphology and growth rate of InSb layers grown by liquid
phase electroepitaxy (LPEE) on B(111) surface of InSb substrate were studie
d. The mixing of In- and Bi-solutions was used to realize the kinetic regim
e of crystallization. The influence of solution mixing, growth temperatures
and supersaturation are manifested in different micromorphology and growth
mechanisms such as dislocation-controlled facet, or the layer and terrace-
layer one. The conditions to improve the flatness of the layers are determi
ned. (C) 1999 Elsevier Science S.A. All rights reserved.