In preparing silicon-based semiconductors for transmission electron mi
croscopy (TEM), it has been widely observed that a backlit silicon sam
ple displays a series of colors in the thinnest regions. These colors
result from absorption and optical interference of light within the si
licon sample and depend upon the type of light source and the silicon
sample thickness. These colors can range from deep red for thicknesses
greater than or equal to 5 mu m, through orange and yellow in the thi
nner regions, to essentially colorless at the thinnest regions. In thi
s work we present the first direct measurement of silicon color versus
thickness and discuss the factors that influence this relationship. C
rown copyright (C) 1997 Published by Elsevier Science Ltd.