A NOVEL MARKER APPROACH FOR THE DETERMINATION OF TRANSPORT NUMBERS DURING THE GROWTH OF ANODIC OXIDE-FILMS ON TANTALUM

Authors
SHIMIZU K KOBAYASHI K THOMPSON GE SKELDON P WOOD GC
Citation
K. Shimizu et al., A NOVEL MARKER APPROACH FOR THE DETERMINATION OF TRANSPORT NUMBERS DURING THE GROWTH OF ANODIC OXIDE-FILMS ON TANTALUM, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(5), 1995, pp. 1409-1412
Citations number
6
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties → ACNP
ISSN journal
01418610
Volume
72
Issue
5
Year of publication
1995
Pages
1409 - 1412
Database
ISI
SICI code
0141-8610(1995)72:5<1409:ANMAFT>2.0.ZU;2-Y
Abstract
From knowledge of the immobility of incorporated silicon species in an odic films on tantalum, developed by high-field ionic conduction, a pr ocedure has been developed for their use as a marker to determine the mobilities of species contributing to film growth on tantalum and othe r species incorporated from the electrolyte. In the example given, seq uential anodizing, firstly in silicate electrolyte and subsequently in sulphuric acid, have been used to determine the transport number of t antalum cations, 0.24, which is an excellent agreement with the value determined by Rutherford back-scattering spectroscopy and chemical sec tioning.