B. Shen et al., Growth of wurtzite GaN films on alpha-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition, APPL PHYS A, 68(5), 1999, pp. 593-596
Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates
using light-radiation heating metal-organic chemical vapor deposition (LRH
-MOCVD) is first reported. The deposition temperature is 950 degrees C, abo
ut 100 degrees C lower than that in normal rf-heating MOCVD growth. The FWH
M of GaN (0002) peak of the X-ray diffraction rocking curve is 8.7 arc min.
Photoluminescence spectrum of GaN film shows that there is a very strong b
and-edge emission and no "yellow-band" luminescence. Hall measurement indic
ates that the n-type background carrier concentration of GaN film is 1.7 x
10(18) cm(-3) and the Hall mobility of it is 121.5 cm(2)/V s. It is suggest
ed that the radiation of light in GaN growth enhances the dissociation of a
mmonia and decreases the disadvantages of the parasite reaction between tri
methylgallium and ammonia.