M. Gao et al., Light-induced charge transfer and kinetics of the NIR absorption of Nb4+ polarons in SBN crystals at low temperatures, APP PHYS B, 68(5), 1999, pp. 849-858
Sr1-xBaxNb2O6 (SBN) crystals with open tungsten-bronze structure show enhan
ced photorefractive properties with doping of impurities such as Ce, Cr, Rh
etc. Under illumination with Kr+ laser (647 nm) or Ar+ laser light (488 nm
or 514 nm) or UV light at low temperature, pure and doped SBN crystals sho
w a broad polaron absorption band around 0.7 eV (6000 cm(-1)). The first st
ep of a theoretical model involves the excitation of electrons by illuminat
ion from Cr3+/Ce3+ to higher excited states or the conduction band. The exc
ited electrons can then be trapped by Nb5+ to form Nb4+ polarons and furthe
r on can directly tunnel through or hop over the potential barrier (with a
value Delta approximate to 0.15 +/- 0.02 eV) to recombine with Cr4+/Ce4+ io
ns. The experimental intensity dependence, temperature dependence, and deca
y process of the light-induced Nb4+ polarons can be fitted with the help of
this model. Small, but systematic, differences lead to the additional assu
mption of different recombination rates of polarons at distinct distances f
rom the Cr4+/Ce4+ recombination centers and therefore many parallel decay c
hannels an active where each decay channel obeys a monoexponential decay la
w. A stretched exponential decay function is employed to fit in this case t
he decay process of the Nb4+ polarons at different temperatures and under i
llumination with different intensities. Due to the high dielectric constant
value (epsilon(33) and epsilon(11) have values in the 10(2) - 10(3) range)
at low temperature, the long range Coulomb attraction (to Ce-Sr/Ba(3+)) or
repulsion (from Cr-Nb(3+)) of the electronic polaron is suppressed. The le
ading role in the attraction and the following trapping of the electronic J
ahn-Teller polaron, both on Cr-Nb(3+) and Ce-Sr/Ba(3+) centers, is played b
y the indirect dipole-dipole interaction via the soft TO-mode.