Influence of shallow traps on holographic recording in Bi12SiO20 in the temperature range 200-350 K

Authors
Korneev, N Mayorga-Cruz, D Sanchez-Mondragon, JJ
Citation
N. Korneev et al., Influence of shallow traps on holographic recording in Bi12SiO20 in the temperature range 200-350 K, APP PHYS B, 68(5), 1999, pp. 859-862
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS B-LASERS AND OPTICS
ISSN journal
09462171 → ACNP
Volume
68
Issue
5
Year of publication
1999
Pages
859 - 862
Database
ISI
SICI code
0946-2171(199905)68:5<859:IOSTOH>2.0.ZU;2-9
Abstract
The photoconductivity response time in Bi12SiO20 grows 3 orders of magnitud e when the temperature changes from 350 to 200 K. We attribute this to the influence of shallow traps with activation energy 0.4 eV. For low temperatu res, the time of holographic grating formation is determined by the time of shallow-level filling.