Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers

Citation
Ad. Andreev et Dv. Donetsky, Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers, APPL PHYS L, 74(19), 1999, pp. 2743-2745
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
19
Year of publication
1999
Pages
2743 - 2745
Database
ISI
SICI code
0003-6951(19990510)74:19<2743:AOTDOT>2.0.ZU;2-X
Abstract
We have carried out the microscopic calculations of Auger recombination and interband absorption in InGaAsSb/AlGaAsSb quantum-well (QW) lasers operati ng within wavelength range 2.3-2.6 mu m. The calculations show that the dom inant Auger process in these laser structures is the process with hole exci tation from the quantized level in QW to the continuous spectrum. The total Auger coefficient shows a weak temperature dependence. Based on the result s of calculations and recent measurements of the heterobarrier hole leakage current and modal gain in 2.3 mu m InGaAsSb QW lasers, we have calculated the temperature dependence of the threshold current. It was shown that a si gnificant value of the Auger coefficient and the temperature dependence of laser gain are the major factors determining the temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb QW lasers. (C) 1999 American Institute of Physics. [S0003-6951(99)01019-0].