Infrared properties of bulk GaN

Citation
M. Hao et al., Infrared properties of bulk GaN, APPL PHYS L, 74(19), 1999, pp. 2788-2790
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
19
Year of publication
1999
Pages
2788 - 2790
Database
ISI
SICI code
0003-6951(19990510)74:19<2788:IPOBG>2.0.ZU;2-0
Abstract
Transmission and reflection measurements in the frequency range (700-2000 c m(-1)) have been carried out on high-quality bulk GaN grown by the sublimat ion technique. The transmission spectra are polarization dependent and show combination bands arising from anharmonic forces. The combination absorpti on is much stronger for E parallel to c polarization than that for E perpen dicular to c polarization. A high value of 350 cm(-1) for the absorption co efficient in the combination band can be explained by the strong anharmonic forces in GaN. (C) 1999 American Institute of Physics. [S0003-6951(99)0161 9-8].