InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 mu m

InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found to be approximately 1.5 times larger as compar ed to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases. The quantum dot emission wavelength can be contro llably changed from 1.1 to 1.3 mu m by varying the composition of the InGaA s quantum well matrix. Photoluminescence at 1.33 mu m from vertical optical microcavities containing the InAs/InGaAs quantum dot array was demonstrate d. (C) 1999 American Institute of Physics. [S0003-6951(99)02119-1].