A cryogenic amplifier for direct measurement of high-frequency signals from a single-electron transistor

Authors
Pohlen, SL Fitzgerald, RJ Hergenrother, JM Tinkham, M
Citation
Sl. Pohlen et al., A cryogenic amplifier for direct measurement of high-frequency signals from a single-electron transistor, APPL PHYS L, 74(19), 1999, pp. 2884-2886
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
19
Year of publication
1999
Pages
2884 - 2886
Database
ISI
SICI code
0003-6951(19990510)74:19<2884:ACAFDM>2.0.ZU;2-Q
Abstract
We have developed a cryogenic voltage amplifier using GaAs metal semiconduc tor field effect transistors and coupled it to a superconducting single-ele ctron transistor (SET) inside a dilution refrigerator. With this amplifier, we could extend the maximum output frequency of the SET, normally less tha n a kilohertz, up to 1 MHz. By placing this amplifier off-chip, we could ma intain the low SET temperature required for proper SET operation. (C) 1999 American Institute of Physics. [S0003-6951(99)03718-3].