XPS study of amorphous zirconium oxide films prepared by sol-gel

Zirconium oxide gel films deposited by dip coating on Si substrates have be en studied by XPS as a function of the annealing temperature between 150 to 400 degrees C and Ar+ ion irradiation time. The use of both ultra-thin (le ss than or equal to 4 nm) and thick (similar to 100 nm) films allowed separ ation of chemical from charging shifts in the O1S and Zr3d binding energies . The preferential sputtering of C and O with respect to Zr under Ar+ bomba rdment was also shown together with the radiation enhanced electrical condu ctivity of the damaged depth in films annealed at temperature lower than 30 0 degrees C containing organic species. The irradiation defects in the gel were also shown to be very chemically reactive for atmospheric OH- groups. (C) 1999 Elsevier Science B.V. All rights reserved.