Process-induced modification to the surface of crystalline GaAs measured by photometry

The photometric chemical analysis technique was used to evaluate the non-in terconnected Ga and As produced at the surface of crystalline GaAs by typic al processes of semiconductor technology including ultrasonic vibrations, d e and microwave heating and thermal annealing. It is shown that such low en ergy treatments considerably change the amount of 'free' Ga and As measured by photometry. The preferred mechanism seems to be point defect motion, wh ich stimulate creeping effects as a result of the absorbed energy. (C) 1999 Elsevier Science B.V. All rights reserved.