Citation
S. Kashimura et al., Refractive-index-adjustment of SiO2-GeO2 films deposited by radio frequency magnetron sputtering, APPL SURF S, 142(1-4), 1999, pp. 58-62
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
142
Issue
1-4
Year of publication
1999
Pages
58 - 62
Database
ISI
SICI code
0169-4332(199904)142:1-4<58:ROSFDB>2.0.ZU;2-P
Abstract
Oxygen annealing of the SiO2-GeO2 films has been investigated to control th
e value of the refractive index. The fluctuation of the refractive index of
as-deposited films became the order of less than 10(-4) by annealing in th
e O-2 atmosphere for 3 h at temperatures of 900 degrees C or higher. Using
this oxygen annealing, the refractive index could be controlled over a wide
range of values from 1.4467 to 1.4740 at 1550 nm by selecting the depositi
on condition of rf-power and two GeO2 targets with different concentration.
The optical attenuation was very low: less than 0.1 dB/cm at 1550 nm. (C)
1999 Elsevier Science B.V. All rights reserved.