Preparation and characterisation of mixed oxide (Ce,Zr)O-2 thin films on Si(111) substrates

We have grown thin films of mixed oxides on Si (111) substrates by electron beam evaporation of pressed CexZr1-xO2 pellets. The growth was initiated u nder UHV environment, and proceeded then under O-2 atmosphere. A multitechn ique approach (XPS, AES, LEED, XRD, RES) was used to characterise the chemi cal and structural composition of the film as well as their interface with the substrate. The films are about 100 Angstrom thick and present at least two phases corresponding to ZrO2 and CeO2. XPS depth profiles showed the fo llowing structure, starting from the substrate: a region of interdiffused Z r and Si, a CeSiOx layer mixed with ZrO2 and finally the homogeneous (Ce,Zr )O-2 film, enriched in Ce with respect to the pellet. (C) 1999 Elsevier Sci ence B.V. All rights reserved.