Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection

Citation
A. Rosental et al., Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection, APPL SURF S, 142(1-4), 1999, pp. 204-209
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
142
Issue
1-4
Year of publication
1999
Pages
204 - 209
Database
ISI
SICI code
0169-4332(199904)142:1-4<204:SOTDAL>2.0.ZU;2-Y
Abstract
We show that the measuring of the reflectance changes in transparent system s allows one to optically characterize the surface of films growing under t he conditions of atomic partial-monolayer deposition. In the model, a conti nuous layer with effective optical parameters describes the growth front. G rowing amorphous TiO2 thin films from TiCl4 and H2O at 115 degrees C is use d in demonstration experiments, (C) 1999 Elsevier Science B.V. All rights r eserved.