Y. Hamakawa, Recent advances in amorphous and microcrystalline silicon basis devices for optoelectronic applications, APPL SURF S, 142(1-4), 1999, pp. 215-226
The current state of the art in recent advances hydrogenated amorphous and
microcrystalline silicon (a-Si and mu c-Si) technologies and their applicat
ions to optoelectronic devices are reviewed. With the recent progress in ma
terial preparation and characterization technologies, we now have an age th
at considerably high quality thin films having valency electron controllabi
lity can be produced. In this paper, recent progress in thin film solar cel
l fabrication with a-Si and mu c-Si technologies for active materials for o
ptoelectronic devices are reviewed first, and their significance are pointe
d out, then some typical newly developed devices such as integrated amorpho
us solar cells, flexible solar cells etc., are demonstrated. Secondly, new
kinds of thin film light-emitting devices, including solid-state flat panel
displays are introduced. In the final part of this paper, the remarkable i
ndustrial progress in the field of optoelectronics and the prospects of mar
ket expansion toward the 21st century are briefly discussed. (C) 1999 Elsev
ier Science B.V. All rights reserved.