Interfacial reactions of Gd thin films on (111) and (001)Si

Authors
Chen, JC Shen, GH Chen, LJ
Citation
Jc. Chen et al., Interfacial reactions of Gd thin films on (111) and (001)Si, APPL SURF S, 142(1-4), 1999, pp. 291-294
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
142
Issue
1-4
Year of publication
1999
Pages
291 - 294
Database
ISI
SICI code
0169-4332(199904)142:1-4<291:IROGTF>2.0.ZU;2-6
Abstract
Interfacial reactions of Gd on both (111) and (001)Si have been investigate d. An amorphous interlayer (a-interlayer) is formed at the initial stage of reactions of RE metal thin films on Si systems. The growth of amorphous ph ase was followed by the nucleation of the crystalline silicide at the a-int erlayer/Si interface. Both hexagonal GdSi2-x (h-GdSi2-x) and orthorhombic G dSi2 (o-GdSi2) were observed to form in (001) and (111) samples. Crystallin e defects such as vacancy ordering and stacking faults were observed and an alyzed. (C) 1999 Published by Elsevier Science B.V. All rights reserved.