Annealing of ultrathin silicon dioxide layers plasma oxidized in ultrahighvacuum

Authors
Majamaa, T Kilpela, O Novikov, S Sinkkonen, J
Citation
T. Majamaa et al., Annealing of ultrathin silicon dioxide layers plasma oxidized in ultrahighvacuum, APPL SURF S, 142(1-4), 1999, pp. 351-355
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
142
Issue
1-4
Year of publication
1999
Pages
351 - 355
Database
ISI
SICI code
0169-4332(199904)142:1-4<351:AOUSDL>2.0.ZU;2-R
Abstract
Ultrathin silicon dioxide layers have been fabricated by the room temperatu re plasma oxidation of silicon in ultrahigh vacuum. Silicon-silicon dioxide interface state densities of 10(11) eV(-1) cm(-2) in the mid-gap can be re ached without any annealing. The oxide charge, however, is then quite high. By using post metallization annealing in 300 degrees C or post oxidation U HV annealing in 750 degrees C the surface state densities can slightly be d ecreased. The oxide charge can be totally removed in 750 degrees C. Neither of these annealings decrease the oxide thickness. (C) 1999 Elsevier Scienc e B.V. All rights reserved.