GaN and InGaN prepared by hot wall beam epitaxy

GaN and InGaN epilayers were successfully obtained on nitrided Ga buffer la yers predeposited on the sapphire (0001) substrate by Not Wall Beam Epitaxy (HWBE) using Ga and/or In metals, NH3 gas or RF plasma nitrogen source. Fo r both films, the surface morphology was smooth and the PL spectra showed s trong near-band-edge emission without deep level emission. For the InGaN fi lms, the highest In mole fraction of 24% was obtained with the substrate te mperature (T-sub) of 575 and the RF power of 500 W, which was estimated fro m the shift of X-ray diffraction peak. (C) 1999 published by Elsevier Scien ce B.V. All rights reserved.