The deposition temperature dependence of the characteristics of TiNx/n-Si S
chottky diodes fabricated via reactive magnetron sputtering, is studied thr
ough the current-voltage characterization and the low frequency excess nois
e measurements. As the deposition temperature was varied from room temperat
ure up to 400 degrees C, both the ideality factor of the diode and the powe
r spectral density of the noise current decreased. The analysis of the low
frequency noise shows that the noise due to the trapping and detrapping at
the interface due to the random walk of electrons via the modulation of the
barrier height dominates the noise due to the mobility fluctuation, except
at very low current levels, in these non-ideal diodes. It is found that th
e interface states density could be reduced by almost an order of magnitude
by raising the deposition temperature up to 400 degrees C from room temper
ature. (C) 1999 Elsevier Science B.V. All rights reserved.