Epitaxial growth and interface structure of PbS on InP(110)

Citation
Ab. Preobrajenski et T. Chasse, Epitaxial growth and interface structure of PbS on InP(110), APPL SURF S, 142(1-4), 1999, pp. 394-399
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
142
Issue
1-4
Year of publication
1999
Pages
394 - 399
Database
ISI
SICI code
0169-4332(199904)142:1-4<394:EGAISO>2.0.ZU;2-L
Abstract
We have investigated layer growth mode, interface chemistry and morphology of PbS layers on InP(110) using XPS and LEED. AL room temperature, the inte rface has been observed to be abrupt and non-reactive. The growth mode is l ayer-like but proceeds in a multilayer fashion. Epitaxial PbS layers have b een grown with the (001) face parallel to InP(110) and good lattice match a long the [1 (1) over bar 0] orientation of the substrate surface. Along the [001] surface direction, an incommensurate. lattice match has been observe d. Upon heating of the substrate during PbS deposition 3D island growth occ urs beyond an initial multilayer stage of growth. (C) 1999 Elsevier Science B.V. All rights reserved.