Citation
Y. Neo et al., Growth of aluminum on Si using dimethyl-ethyl amine alane, APPL SURF S, 142(1-4), 1999, pp. 443-446
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
142
Issue
1-4
Year of publication
1999
Pages
443 - 446
Database
ISI
SICI code
0169-4332(199904)142:1-4<443:GOAOSU>2.0.ZU;2-B
Abstract
The paper describes growth of aluminum on a hydrogen terminated Si (100) su
rface using dimethyl-ethyl amine alane. The growth rate depends on the subs
trate temperature with an activation energy of 0.56 eV at the temperature r
anging from 150 to 250 degrees C. Selective growth of Al into 1.5-mu m diam
eter via-holes is successfully demonstrated at the substrate temperature of
150 degrees C. Tn situ FTIR measurements suggest that growth of Al occurs
by the chemical reaction between AlH3 and a hydrogen terminated Si surface.
(C) 1999 Elsevier Science B.V. All rights reserved.