Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE

Hydride vapor phase epitaxy (HVPE) is used nowadays for the growth of new I II-V semiconductors (GaN, InGaN...), as well as for the selective epitaxy o f III-V layers on patterned III-V [E.R. Messmer et al., Materials Science a nd Engineering B51 (1998), pp. 238-241] or silicon [O. Parillaud, E. Gil-La fon, B. Gerard, P. Etienne, D. Pribat, Appl. Phys. Lett. 68 (1996), pp. 265 4-2656] substrates. It has already been demonstrated that InAs/InP strained quantum wells [H. Banvillet, E. Gil-Lafon, R. Cadoret, P. Disseix, K. Ferd jani, A. Vasson, A.M. Vasson, A. Tabata, T. Benyattou, G. Guillot, J. Appl. Phys. 70 (3) 1991, pp. 1638-1641.] and InGaAs/InP quantum wells [N. Piffau lt, E. Gil, J. Leymarie, S.A. Clark, M. Anderson, R. Cadoret, A. Vasson, A. M. Vasson, J. Crystal Growth 135 (1994), pp. 11-22.] could be achieved by H VPE. We will present here the study of the growth of InAsP/InP strained qua ntum wells by HVPE. Relaxed InAsP layers were first grown in order to deter mine the composition of the alloys. Single quantum wells and multi-quantum well structures were then achieved. Photoluminescence analysis of the sampl es have shown the high quality of the InAsP/InP quantum wells. The feasibil ity of low dimensionality structures using HVPE process was then demonstrat ed, with an accurate control of the thickness and the composition of InAsP/ InP quantum wells. (C) 1999 Elsevier Science B.V. All rights reserved.